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Preparation and electronic characteristics of anionic perylene bisimide films 被引量:1

Preparation and electronic characteristics of anionic perylene bisimide films
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摘要 Neutral perylene bisimides(PBI) are well-known n-type organic semiconductors, with number of challenging electronic properties in their neutral and reduced states. We report the characteristic electronic properties of PBI anionic films. We unexpectedly discovered that pristine PBI dianion film showed p-type character, while oxidized dianion film(dominant neutral state with few radical anions) showed normal n-type semiconductor character based on Seebeck effect measurements. Both kinds of films exhibit high electrical conductivity with a potential for thermoelectric applications. The mechanism of polarity reversal is proposed. Neutral perylene bisimides(PBI) are well-known n-type organic semiconductors, with number of challenging electronic properties in their neutral and reduced states. We report the characteristic electronic properties of PBI anionic films. We unexpectedly discovered that pristine PBI dianion film showed p-type character, while oxidized dianion film(dominant neutral state with few radical anions) showed normal n-type semiconductor character based on Seebeck effect measurements. Both kinds of films exhibit high electrical conductivity with a potential for thermoelectric applications. The mechanism of polarity reversal is proposed.
出处 《Science China Chemistry》 SCIE EI CAS CSCD 2017年第10期1334-1339,共6页 中国科学(化学英文版)
基金 supported by the National Natural Science Foundation of China (51573055, 51373054, 21334002, 51403063) National Basic Research Program of China (2014CB643504) Fundamental Research Funds for the Central Universities China Postdoctoral Science Fund (2014M562174) Introduced Innovative Research & Development Team of Guangdong (201101C0105067115)
关键词 dianion/radical anion elelctrical conductivity perylene bisimide p-type thermoelectric conversion 阴离子膜 电学特性 苝酰亚胺 薄膜 有机半导体材料 制备 塞贝克效应 半导体特性
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