摘要
通过正交试验对氮化硅陶瓷基体进行超声精细雾化抛光,研究抛光工艺参数(抛光液流量、抛光压力、抛光盘转速)对抛光速率和表面粗糙度的影响。以抛光后氮化硅陶瓷的材料去除率和表面粗糙度为评价指标,根据正交试验结果得到最优参数组合,并与传统的抛光效果进行试验对比。结果表明:研究的3种参数中,对材料去除率的影响程度由高到低依次为雾液流量、抛光压力、抛光盘转速,对抛光后工件表面粗糙度的影响程度由高到低依次为抛光盘转速、雾液流量、抛光压力;在相同的实验条件下,精细雾化抛光的材料去除率与表面粗糙度与传统抛光接近,但精细雾化抛光的抛光液用量仅为传统用量的12.5%,有效减少了资源的浪费。
Ultrasonic fine atomization polishing of silicon nitride ceramic substrate was carried out by orthogonal tests, and the effect of polishing parameters （ slurry flow rate, polishing pressure, polishing speed） on the polishing rate and sur- face roughness of the silicon nitride substrate was studied.In order to realize the high efficiency and high quality machining of silicon nitride ceramics,with the material removal rate and surface roughness of polished silicon nitride ceramics as the evaluating indicators,the optimal parameter combination was obtained according to the results of orthogonal experiments, and the polishing effect by optimal parameters was compared with traditional polishing effect.The results show that ,for the three kinds of polishing parameters studied, the polishing liquid flow has the largest influence on the material removal rate, following by polishing pressure and polishing speed, while the polishing speed has the largest influence on the surface roughness of the silicon nitride substrate, following by polishing liquid flow and polishing pressure. Under the same experi- mental conditions, the material removal rate and surface roughness by fine atomization polishing are close to those of traditional polishing, but the amount of polishing liquid used for fine atomization polishing is only 12. 5% of that used for traditional polishing,which avoids the waste of resources effectively.
出处
《润滑与密封》
CAS
CSCD
北大核心
2017年第11期95-99,共5页
Lubrication Engineering
基金
国家自然科学基金项目(51175228)
关键词
正交试验
工艺参数
雾化抛光
氮化硅陶瓷
表面粗糙度
orthogonal test
process parameters
atomization polishing
silicon nitride ceramics
surface roughness
