摘要
根据红外测温原理、薄膜等厚干涉模型及相关光学参数,在Al2O3、SiC、Si三种衬底上用金属有机物化学气相沉积(MOCVD)技术制备10μm GaN外延层的过程中,对940nm单色测温、1550nm单色测温、940nm/1550nm比色测温的发射率引起表观温度误差、真实温度与表观温度偏差进行理论比较。利用Si(111)衬底上制备InGaN/GaN多量子阱(MQW)蓝光发光二极管(LED)外延片过程的940nm单色测温及940nm/1550nm比色测温结果,验证该建模及计算的正确性。研究结果表明:在500~1300℃,相同测温法在不同衬底间表观温度误差系数区别不大。相同衬底下,误差系数由小到大依次为:比色测温、940nm单色测温、1550nm单色测温。相同测温法在不同衬底间真实温度与表观温度偏差较大。相同衬底下,偏差结果由小到大依次为:比色测温、1550nm单色测温、940nm单色测温。该计算方法与结论可为红外测温设备的研发、不同衬底GaN基外延测温方法的选择提供借鉴与参考。
The apparent temperature errors caused by emissivity indexes of 940 nm monochromatic thermometry, 1550 nm monochromatic thermometry and 940 nm/1550 nm colorimetric thermometry and deviation between the actual temperatures and apparent temperatures are theoretically compared based on infrared thermometry principle,film equal thickness interference model and relative optical properties. These are conducted during preparation of 10 μm GaN epitaxy wafer on Al2O3, SiC and Si by using metal-organic chemical vapor deposition （MOCVD） technique. Moreover, the results of 940 nm monochromatic thermometry and 940 nm/1550 nm colorimetrie thermometry of the blue light emitting diode （LED） epitaxial wafer with InGaN/GaN multiple quantum wells （MQW） structure growing on silicon （111） substrate verify the correctness of the modeling and the computation. The study result shows that the distinction of apparent temperature error coefficients with the same thermometry on different substrates is small in the range from 500 ℃ to 1300 ℃. The error coefficient with the same substrates from small to large are colorimetric thermometry, 940 nm monochromatic thermometry and 1550 nm monochromatic thermometry. Deviation between the actual temperatures and apparent temperatures on the different substrates with the same thermometry is large. The deviation with the same substrates from small to large are colorimetric thermometry, 1550 nm monochromatic thermometry and 940 nm monochromatic thermometry. This computational method and conclusion can he used for reference to develop the infrared thermometry device and choose the thermometry of the GaN epitaxy on different substrates.
出处
《激光与光电子学进展》
CSCD
北大核心
2017年第11期176-183,共8页
Laser & Optoelectronics Progress
基金
国家863计划(2011AA03A101)
陕西省尾矿资源综合利用重点实验室开放基金(2014SKY-WK012)
陕西省教育厅专项科研计划(16JK1241)
商洛市科技计划(SK2015-29)
商洛学院科研基金(13SKY-FWDF005)
关键词
测量
红外测温
金属有机物化学气相沉积
GAN
外延
比较研究
measurement
infrared thermometry
metal-organic chemical vapor deposition
GaN
epitaxy
comparative study
