摘要
本文通过实验测定了20MnSi在不同加热速度条件下奥氏体形成温度。实验结果表明,奥氏体形成温度与加热速度近似为直线关:AC3=910-0.7055V。在奥氏体形变过程中,如果奥氏体中的应变积累大于奥氏体动态再结晶临界应变,则奥氏体将发生动态再结晶。若20MnSi在轧制道次之间发生了静态再结晶,奥氏体静态再结晶晶粒尺寸与再结晶温度T遵循经验公式d_(SRX)=a×d_0~b×ε~c×exp(-Q/RT),其中a=3.43,b=-0.4,c=-0.5。
The temperature of austenite formation of 20MnSi at different heating rates was determined by experiment in this paper. The experimental results show that the temperature formed by austenite during heating is approximately linear with the heating rate： Ac3 = 910 -0. 7055V. In the austenite deformation process, if the austenite strain accumulation is greater than the austenite dynamic recrystallization critical strain, the austenite will occur dynamic reerystallization. The static recrystallization occurs between 20MnSi in the rolling pass, the empirical formula of the static recrystallization grain size dsRx （ mm） of austenite static recrystallization temperature T（k） was： d（SRX）=a×d0^b×ε~c×exp（-Q/RT）,, the material constants a=3.43,b=-0.4,c=-0.5.
出处
《冶金设备》
2017年第B07期90-94,共5页
Metallurgical Equipment
