摘要
采用金属有机化学气相沉积(MOCVD)技术,在非掺杂GaN层上原位生长SiNx掩模层,制备了形貌可控的类金字塔状GaN微米结构,并系统研究了生长温度、生长时间、反应压力和Ⅴ/Ⅲ比等不同生长参数对其形貌的影响。研究结果表明,在生长温度为1 075℃时,所生长的GaN呈现出类金字塔状微米锥结构;当生长时间由3 min延长至20 min时,微米锥的底面直径由3.6μm增大到19.8μm,密度由3.8×10~3cm^(-2)降低至0.8×10~3cm^(-2);压力及Ⅴ/Ⅲ比共同决定该结构顶部的微观形貌(锥状或截顶锥状)。本工作的研究结果为GaN微钠米结构的原位可控生长奠定了一定基础,并有助于三维GaN基LED器件的进一步发展。
The GaN micro-pyramid was grown on unintentional doped GaN epitaxial layers with in-situ pre-deposited SiNx mask via metal organic chemical vapor deposition（MOCVD）.The effects of growth temperature,growth time,reaction pressure andⅤ/Ⅲ ratio on morphology of the GaN micro-pyramids were studied systematically.The results showed that the GaN micro-pyramid structures were formed at 1 075 ℃.As the growth time was prolonged from 3 min to 20 min,the basal diameter of the GaN micropyramids increased from 3.6μm to 19.8μm,while the density decreased from 3.8×10~3cm^（-2） to 0.8×10~3cm^（-2）.The final complete pyramid-like or truncated pyramid-like GaN micro-structures was mainly determined by reaction pressure and Ⅴ/Ⅲ ratio.These results pave the way for the controllable in-situ growth of GaN micro/nano structures and may facilitate the further development of three-dimensional GaN-based LED devices.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2017年第22期21-25,共5页
Materials Reports
基金
国家自然科学基金(21471111
61604104)
山西省基础研究项目(201601D202029)
山西省科技创新重点团队(201605D131045-10)
