摘要
巨磁阻传感器具有灵敏度高、易小型化、能耗低、应用前景广泛等特点,但其灵敏度易受温度的影响,在高性能应用中需进行必要的温度补偿。文中设计针对课题组研制的VA100F3自旋阀巨磁阻传感器灵敏度的温度特性,采用CMOS温度传感器来采集温度信号,并通过模数转换器转变为控制信号,进而调节可调增益放大器的增益,以补偿温度变化所导致的GMR传感器灵敏度的变化,巨磁阻传感器温度补偿前后的灵敏度温度系数分别是2 498 ppm/℃和678ppm/℃,达到了较好的补偿效果。系统各电路均基于CSMC 0.5μm Mix-Signal工艺进行设计,可以实现单芯片集成。
GMR sensor has the characteristics of high sensitivity,easy miniaturization,Iw power consumptionand wide application . However,its sensitivity is easy to be affected by the change of temperature,it’s necessary tohave temperature compensation in high performance application. The temperature compensation circuit system isbased on the temperature - sensitivity characteristics of YA1003F,which is a spin valvsearch group. CMOS temperature sensor samples temperature signal of environment and ADC convsignal into digital signal to change the gain of programmable instnumentation amplifier,it achieves senssation .The temperature coefficient of GMRsensor is 678 ppm/0C after compensating,but the temperature coefficient is 2 498 ppm/℃ Cwithout compensating. The circuit system is based on CSMC 0. 5 μm Mix - Signal technology andcan integrate on a chip.
出处
《电子科技》
2017年第12期17-20,24,共5页
Electronic Science and Technology
基金
国家863计划(2014AA032904)
