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提高通用IC测试系统瞬态大电流测试可靠性的研究

Study on Reliability Improvement of Transient Large Current Test for General IC Test System
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摘要 对瞬态大电流的参数进行测试,实质上就是测试桥式驱动集成电路的MOSFET短路电流持续时间。现有的测试手段无法在IC测试系统上实现可靠的全参数测试。鉴于此,以现有的IC测试系统为平台,特别是依托国产IC测试系统,尝试解决瞬态大电流参数测试结果的可靠性问题,实现桥式驱动集成电路自动化、全参数的测试,最终提高集成电路测试结果的准确性和可靠性。 Parameter test of transient high current is actually testing the duration time of MOSFET short-circuit current of bridge driver IC. Present test methods cannot realize the reliable all parameters tests on the basis of IC test system. Given this, a attempt is done to solve the transient high current testing results reliability problem based on present IC test system as a platform, especially relying on domestic IC test system to realize IC automated and all parameter testing ,and finally to enhance the accuracy and re-liability of IC test results.
出处 《微处理机》 2017年第6期25-29,共5页 Microprocessors
关键词 VMOS工艺 驱动 测试 J750测试系统 数字波形 绝缘栅双极晶体管 VMOS process Driver Test J750 Digital waveform IGBT
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