摘要
区熔工艺中各项参数的设置会直接影响高阻单晶的电阻率均匀性。在高阻区熔硅单晶生长时,通过采用下轴正、反向交替旋转的模式,可使直径75 mm的高阻单晶的径向电阻率变化可控制在15%以下,而这一参数在下轴单向旋转时则为30%~40%或更高。从单晶断面及轴向电阻率分布情况可以看出,区熔硅单晶的径向电阻率分布主要由晶体生长界面的形状以及晶体旋转、电磁力及重力等因素决定,并在生长界面边缘形成高电阻率区,杂质分凝对径向电阻率分布的影响较小,只体现在轴向电阻率的变化上。
The parameters of the FZ process will directly affect the resistivity uniformity of the high resistivity single crystal. The experimental results show that the radial resistivity of the grown 3-inch single crystal can be controlled below 15% by using the positive and negative alternating rotation modes. And this parameter in the axis of unidirectional rotation was 30% to 40% or higher. In respect of the single crystal section and the axial resistivity distribution, it can be seen that the radial resistivity distribution of the silicon single crystal is mainly determined by the shape of the crystal growth interface, the crystal rotation, the electromagnetic force and the gravity. And the formation of high resistivity region at the edge of the growth interface. The effect of impurity segregation on the radial resistivity distribution is small, which only affects the change of the axial resistivity.
出处
《电子工业专用设备》
2017年第6期6-9,33,共5页
Equipment for Electronic Products Manufacturing
关键词
区熔
硅单晶
生长工艺
电阻率均匀性
Float zone
Silicon single crystal
Growth process
Resistivity uniformity
