期刊文献+

轴向磁场下多晶硅定向凝固研究 被引量:1

Study on Directional Solidification of Polycrystalline Silicon under Axial Magnetic Field
原文传递
导出
摘要 利用有限元软件COMSOL Multiphysics对多晶硅定向凝固过程进行二维数值模拟,研究轴向磁场对多晶硅定向凝固的影响。模拟结果显示,未加磁场时多晶硅固液界面的等温线是下凹的;当线圈中加以不同的电流进行磁场模拟时,发现轴向磁场能够有效地抑制硅熔体对流,进而影响结晶时的固液界面。随着电流的增大,熔体最大流速减小,最大洛伦兹力也增大。通过试验验证,相同的工艺条件,在磁场作用下相比于没有磁场时硅锭的界面由下凹变得平滑。 The two-dimensional numerical simulation of directional solidification process of polycrystalline silicon was carried out by using finite element soflware COMSOL Multiphysics, and the influence of axial magnetic field on the directional solidification of the polycrystalline silicon was studied. The simulation results show that the isotherm of the solid-liquid interface of the polycrystalline silicon is concave without magnetic field. When the coils are subjected to different currents to simulate the magnetic field, it is found that the axial magnetic field can effectively restrain the convection of silicon melt, and then affect the solid-liquid interface. With the increase of current; the maximum flow velocity decreases and the maximum Lorenz force increases. It is verified by the experiments that compared with that without magnetic field, the ingot interface changes from concave to smooth under magnetic field.
出处 《热加工工艺》 CSCD 北大核心 2018年第1期88-91,95,共5页 Hot Working Technology
基金 国家自然科学基金项目(51164033,51664047,51561022,61306084) 江西省自然科学基金项目(20132BAB206021) 江西省高等学校科技落地计划项目(KJLD12050) 江西省教育厅科学技术研究项目(GJJ151220,11739,12748)
关键词 多晶硅 定向凝固 数值模拟 轴向磁场 熔体对流 polycrystalline silicon directional solidification numerical simulation axial magnetic field melt convection
  • 相关文献

参考文献2

二级参考文献16

  • 1李友荣,余长军,吴双应,彭岚.轴向磁场对硅单晶Czochralski生长过程的影响[J].材料研究学报,2005,19(3):249-254. 被引量:8
  • 2郑敏.Helmholtz线圈的磁场分布及应用[J].青海大学学报(自然科学版),2005,23(5):63-64. 被引量:3
  • 3NAKANO S, Chen X J, Gao B, et al. Numerical analysis of cooling rate dependence on dislocation density in multicrystalline Silicon fbr solar cells [J]. Journal of Crystal Growth,2011,318(1):280-282.
  • 4CHEDZEY H A, HURLED J. Avoidance of growth-striae in semiconductor and metal crystals grown by zone-melting tech- niques[J]. Nature, 1966,210:933-934.
  • 5DOLD P, CROLL A, BENZ K W. Floating-zone growth of Sili-con in magnetic fields. 1. Weak static axial fields[J]. Journal of Crystal Growth, 1998,183(4) : 545-553.
  • 6STELIAN C, DELANNOY Y, YVES F, et al. Solute segregation in directional solidification of GalnSb concentrated alloys under alternating magnetic fields [J ]. Journal of Crystal Growth, 2004, 266(1/3) :207-215.
  • 7魏东海.勾形磁场对硅单晶CZ生长过程影响的全局数值分析[D].重庆:重庆大学,2009.
  • 8张厥宗.硅片加丁技术[M].北京:化学工业出版社,2009.
  • 9陈围红,王滋渊,肖益波,等.多品硅锭定向凝同过程的数值模拟[J].电子工业专用没备,2009(6):40-43,46.
  • 10KULIEV A T, DURNEV N V, KALAEV V V. Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for Silicon solar cells[J]. Journal of Crystal Growth, 2007, 303(1): 236-240.

共引文献10

同被引文献10

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部