摘要
为准确测量Ga N HEMT与夹具界面层的热阻,在两种不同的管壳界面材料条件下,利用经过改进的显微红外热像仪测量Ga N HEMT的降温曲线。采用结构函数算法对两种降温曲线进行分析,得到反映器件各层材料热阻的积分结构函数曲线。利用JESD51-14中的方法分别确定结壳热阻分离点和夹具到热沉的热阻分离点,得到结壳热阻Rj-c为1.078 K/W,夹具到热沉的热阻Rf-s为0.404 K/W。利用两种条件下的总热阻减去结壳热阻和夹具到热沉的热阻得到管壳界面材料热阻,导热硅脂热阻为0.657 K/W,空气介质热阻为1.105 K/W。依据该方法可以实现对界面层热阻的测量。
In order to accurately measure the thermal interface resistance of GaN HEMT on fixture, cooling curves were measured using an improved IR microscope on two different kinds of thermal interface materials. Structure function method was used to analyze the cooling curves, and the cumulative structure function curves were then obtained which showed the thermal resistances of layers. Based on the means provided in JESD51-14, the separation points of junction-to-case thermal resistance and fixture-to-thermal sink were defined. The junction-to-case thermal resistance（Rj-c） is 1.078K/W and the fixture-to-thermal sink（Rf-s） is 0.404K/W. Thus, the thermal interface resistance was obtained by subtracting Rj-c and Rf-s from total thermal resistance, the thermal resistance of thermal grease is 0.657 K/W and the thermal resistance of air is 1.105 K/W. By this method, measurement of the thermal interface resistance can be realized.
出处
《中国测试》
CAS
北大核心
2018年第1期31-34,共4页
China Measurement & Test
关键词
结构函数
GAN
HEMT
热阻
界面层
瞬态双界面法
structure function
GaN HEMT
thermal resistance
interface layer
transient dual interface test method（TDIM）
