摘要
利用等离子体增强原子层沉积系统,以逐层刻蚀方式对GaSb进行氮(N)钝化处理,研究了钝化过程中刻蚀周期对GaSb钝化效果的影响。研究结果表明,当刻蚀周期数为200时,钝化效果最好;刻蚀周期数不足(100)时,钝化效果最弱;刻蚀周期数较高(300~400)时,随着刻蚀周期数的增大,钝化效果减弱。
The nitrogen passivation of GaSb by etching method layer by layer is conducted based on the plasma enhanced atomic layer deposition （PEALD） system, and the influence of etching cycle in the passivation process on the passivation effect of GaSb is discussed. The study results show that, the passivation effect is the best when the etching cycle number is 200. When the etching cycle number is smaller than 100, the passivation effect is the weakest. When the etching cycle is relatively higher （300-400）, the larger the etching cycle number is, the weaker the passivation effect is.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2018年第1期123-128,共6页
Chinese Journal of Lasers
基金
国家自然科学基金(61404009
61474010
61574022
61504012
61674021
11674038)
吉林省科技发展计划(20160519007JH
20160101255JC
20160204074GX
20170520117JH)
关键词
材料
光致发光
N钝化
GASB
刻蚀周期
materials
photoluminescence
nitrogen passivation
GaSh
etching cycle
