摘要
为实现Faims气体传感器梳齿型离子迁移区的设计,文中采用感应耦合等离子体(ICP)刻蚀技术进行大深宽比梳齿型结构的深硅刻蚀。影响刻蚀的工艺参数主要包括RF功率、腔室压力、气体流量等,通过调节刻蚀气体SF6流量、腔室压力等参数进行试验,分析工艺参数对刻蚀速率、表面形貌和侧壁垂直度的影响,选出最优工艺参数。根据选出的最优工艺参数,刻蚀出了侧壁光滑、垂直度为90°的梳齿型迁移区。
In order to achieve comb-shaped ion transport region FAIMS air sensors design,in this paper,an inductively cou-pled plasma（ICP）etching technology was used for high aspect ratio comb-shaped structure deep silicon etching.Process parame-ters that affect etching mainly included RF power,chamber pressure,gas flow,etc,through adjusting the etching gas SF6 flow,chamber pressure etc,experimental parameters impact of process parameters on the etching rate,surface morphology and the de-gree of vertical side walls were analyzed,the optimal process parameters were chosen.According to the optimal process parametersselected,comb type migration area which is smooth and has vertical degree of 90°was etched.
出处
《仪表技术与传感器》
CSCD
北大核心
2018年第2期1-3,27,共4页
Instrument Technique and Sensor
基金
国家自然科学基金项目(51375462)
关键词
深硅刻蚀
大深宽比
刻蚀速率
工艺参数
deeply silicon etching
high aspect ratio
etching rate
process parameters
