摘要
以AZO陶瓷为基体,采用传统的固相烧结技术制备了ZrO_2掺杂AZO防静电陶瓷,研究了不同烧结温度、ZrO_2掺杂量对AZO陶瓷的表面电阻率、相对密度、维氏硬度的影响。通过XRD测定陶瓷的物相结构,SEM观察陶瓷的断面形貌,表面电阻测试仪测量陶瓷的表面电阻,维氏显微硬度仪测量陶瓷的维氏硬度,阿基米德排水法测量陶瓷密度等方法对ZrO_2掺杂AZO陶瓷进行了分析表征。结果表明:当烧结温度为1450℃,ZrO_2的掺杂量为1wt%时,其综合性能最佳。此时陶瓷表面电阻率为10~5Ω·cm,相对密度达97.61%,维氏硬度为357.5 HV0.3,已达到防静电陶瓷性能要求。
Alrstract：ZrO2-doped AZO ceramic were preparaed by traditional solid-state sintering method, which based on doping ZrO2 into the AZO ceramic. The effects of the ZrO2-doped amount and sintering temperature on the sheet resistance, relative density and vickers hardness of the ceramic were investigated. The phase structure was analyzed by X-ray diffraction, the fracture morphology was observed by SEM, the sheet resistance was measured by Monroe Surface Resistance Test Kit and the hardness was measured by a Vickers microhardness instrument, the density was measured by Using Archimedes drainage method. The experimental results show that the optimal ZrO2 doping amount is lwt% and the sintering temperatre is 1450 ℃, resulting in a sheet resistance of 10^5 Ω· cm, a relative density of 97. 61% and a Vickers hardness of 357.5 HV0.3, which has got the anti-static property.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2018年第2期365-369,共5页
Journal of Synthetic Crystals
基金
深圳市基础研究项目(JCYJ20160422144751573
JCYJ20160422104921235
JCYJ20140418181958489)
