摘要
利用微波等离子体气相沉积法,以氢气、氩气、甲烷为气源,在20~26 k Pa,碳源浓度0.3%~1%条件下,通过改变气压与碳源浓度来制备纳米金刚石薄膜。运用Raman、SEM、XRD分别表征纳米金刚石薄膜的质量、表面形貌、晶粒大小。结果表明随着气压升高,沉积速率越快,薄膜质量先升高后降低。在一定气压范围内可以通过增大气压减少碳源浓度,能获得相对高质量的纳米金刚石薄膜。
The influence of total gas pressure （20 - 26kPa） and metbune concentration （0.3% - 1% ） on diamond growth using mixture gas of H2/Ar/CH4 source by microwave plasma chemical vapor deposition （ MPCVD ） was investigat- ed. For a fixed methane concentration, cburactefization by Raman spech-oscopy, scmming electron microscopy and X-ray diffraction indicated Characterization of nano diamond quality, surface morphology, grain size. The results show that growth rate increase with pressme increasing, but quality of nano-diamond fihns first become better then become worse while the pressme increases. Then using higher pressure and litter methane concentration could gain highly quality nanocrystalline diamond films.
作者
白傲
汪建华
何硕
熊刚
周程
梁天
BAI Ao;WANG Jian-hua;HE Shuo;XIONG Gang;ZHOU Chen;LIANG Tian(Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan Institute of Technology Materials Science and Engineering,Wuhan 430074, China)
出处
《真空与低温》
2018年第2期107-111,共5页
Vacuum and Cryogenics
基金
武汉工程大学研究生教育创新基金项目(No.CX2016021)
关键词
微波等离子体
化学气相沉积
纳米金刚石薄膜
气压
microwave plasma
Chemical vapor Deposition
nanocrystalline dialnond
pressure
