摘要
利用感应耦合等离子体深硅刻蚀机与阳极键合机,制备出了应用于芯片原子钟的碱金属气室。以AZ4620光刻胶为硅片掩模,研究了深硅刻蚀后硅表面的形貌特征,对比了不同结构下深硅刻蚀速率。经过阳极键合,获得了三明治结构的微碱金属气室,并检测其饱和吸收谱线。实验结果表明:制备出的微碱金属气室在温度为80℃条件下出现明显的饱和吸收现象。
By using the inductively coupled plasma （ICP） deep silicon etching machine and the anodic bonding system, the alkali-metal vapor cell applied to the chip scale atomic clock （CSAC） is fabricated. With the AZ4620 photoresist as a mask, the silicon surface morphology after deep silicon etching is studied and the deep silicon etching rates under different structures are compared. The micro alkali-metal vapor cell with a sandwich structure is obtained by using the anodic bonding, and the saturation absorption line is detected. The experimental results show that a significant saturated absorption phenomenon is observed in the fabricated micro alkali-metal vapor cell when the temperature is 80℃.
作者
汤跃
任子明
李云超
胡旭文
张彦军
闫树斌
Tang Yue;Ren Ziming;Li Yunchao;Hu Xuwen;Zhang Yanjun;Yan Shubin(Key Laboratory of Instrumentation Science and Dynamic Measurement, Ministry of Education, North University of China, Taiyuan, Shanxi 030051, China)
出处
《激光与光电子学进展》
CSCD
北大核心
2018年第4期29-35,共7页
Laser & Optoelectronics Progress
基金
科技部国家重点研发计划(2017YFB0503200)
山西省自然科学基金(201601D011008
201701D121065)
山西省"1331工程"重点学科建设计划
山西省高等学校131领军人才
山西省高等学校中青年拔尖创新人才
山西省留学回国人员科技活动择优资助项目
关键词
原子与分子物理学
芯片原子钟
碱金属气室
饱和吸收
感应耦合等离子体
阳极键合
atomic and molecular physics
chip scale atomic clock
alkali-metal vapor cell
saturated absorption
inductively coupled plasma
anodic bonding
