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电子束辐照对GaN基白光LED发光性能的影响 被引量:2

Influence of Electron Beam Irradiation on Luminescence Properties of GaN-based White LED
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摘要 研究了低能电子束辐照对GaN基白光LED发光性能的影响。利用电子束模拟空间电子辐射,对白光LED灯板进行电子束辐照,并与辐照前的灯板比较,研究其光学性能,尤其是色度学性能的变化。试验结果表明,在电子束辐照后,LED的光效退化,色温增强,蓝光峰值波长蓝移,荧光粉激发作用增强。最后总结了辐照前后的平均蓝光峰值波长、黄光相对峰强以及色温的变化值与辐照剂量的对应关系。同时对实验结果进行机理分析和讨论。本实验对照明用白光GaN基LED的辐照研究以及改性实验有指导作用。 In this paper,the effect of low energy electron beam irradiation on the luminescence properties of GaN based white LED has been studied,in which electron beam was used as electron radiation to irradiate the white LED lamp panel.The changes of optical properties in irradiated LED,especially colorimetric properties,was studied and compared with the one before irradiation.It is shown that after irradiation the luminous efficiency of LED degrades,the color temperature enhances,the peak wavelength of blue light decreases,and the excitation effect of phosphor enhances.The relationship between the irradiation dose and the average blue peak wavelength,yellow light relative peak intensity as well as color temperature was summarized and analyzed.The work brings guidance for the irradiation research and modifying experiment of GaN based white LED.
作者 于莉媛 杨磊 田海涛 牛萍娟 何金刚 YU Liyuan;YANG Lei;TIAN Haitao;NIU Pingjuan;HE Jingang(School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin, 300387, CHN;School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin, 300387, CHN)
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2018年第2期127-131,共5页 Research & Progress of SSE
基金 国家自然科学基金青年项目(11204211) 天津市应用基础与前沿技术研究计划青年项目(13JCQNJC00700)
关键词 电子束辐射 白光 氮化镓 发光二极管 荧光粉 electron beam irradiation white light GaN light-emitting diode (LED) phosphor
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