摘要
利用乙酸锌和乌洛托品(六次甲基四胺)的水热反应,在ITO导电基底表面合成ZnO纳米棒阵列薄膜,然后在ZnO纳米棒表面负载CdS量子点,最终制得ZnO/CdS异质纳米棒阵列材料。产品纯度高,结晶度良好。通过光催化降解有机污染物罗丹明B(RhB)的实验,分析了ZnO/CdS异质结构的光电性质。结果表明,经CdS量子点修饰后,ZnO纳米棒阵列的光利用率显著提高,光催化活性也大大改善。
The hydrothermal reaction between zinc acetate and hexamethylenetetramine was used to synthesize a ZnO nanorod array film on the surface of ITO conductive substrate,then the CdS quantum dots were loaded on the surface of ZnO nanorods to obtain ZnO/CdS heterogeneous nanorod array materials. Photo-catalytic degradation of organic pollutants Rh B（ Rh B） was used to analyze the photoelectric properties of ZnO/CdS heterostructures. The results show that the modification of CdS quantum dots significantly improve the light utilization efficiency of ZnO nanorod arrays,and the photocatalytic activity is also greatly improved.
出处
《山西焦煤科技》
2018年第2期52-57,共6页
Shanxi Coking Coal Science & Technology
