摘要
利用直流磁控溅射方法低温沉积了氢掺杂AZO(H-AZO)薄膜,研究了不同退火温度下H-AZO薄膜的电学、结构和光学性能的变化。结果表明,300℃退火时,H-AZO薄膜的电阻率和光学带隙不变。而400℃退火时,薄膜电阻由4.7×10^(-4)升高到1.43×10^(-3)Ω·cm,并且光学带隙减小。由于300℃退火时H-AZO薄膜的热稳定性好,将其用作低温制备薄膜太阳电池的透明导电膜具有很好的发展潜力。
The hydrogen and aluminum co-doped zinc oxide （H-AZO） thin films were deposited by DC magnetron sputtering at low temperature. The influence of the annealing temperature in low vacuum on the thermal sta- bility of electrical and optical properties was investigated with X-ray diffraction, speetrophotometry and Hall-effect measurement. The results show that annealing at a temperature over 300℃ negatively affected the thermal stability of H-AZO coatings. For example, as the annealing temperature increased from 300℃ up to 400℃, the electrical resistivity significantly increased from 4.7 × 10^4 to 1.43× 10^-3 Ω·cm, accompanied by a reduction of the optical band gap,possibly because of increasing escape of hydrogen in the H-AZO coatings. We suggest that the H-AZO coatings, annealed at 300℃ , be a good transparent conducting oxide layer for thin film solar cells.
作者
李乐
苌瑞广
刘智
朱志立
谷锦华
Li Le;Chang Ruiguang;Liu Zhi;Zhu Zhili;Gu Jinhua(Key Laboratory of Materials Physics of Ministry of Education, School of Physical Engineering Zhengzhou University, Zhengzhou 450052, Chin)
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2018年第5期380-383,共4页
Chinese Journal of Vacuum Science and Technology
基金
河南省自然科学基金项目(批准号:162300410254)
河南省高等学校重点科研项目(批准号:16A140019)
关键词
AZO薄膜
磁控溅射
退火
热稳定性
AZO film
Magnetron sputtering
Annealing
Thermal stability
