摘要
采用直流磁控溅射的方式,在浮法玻璃衬底上制备了氧化铟锡(ITO)薄膜。通过改变薄膜沉积时间,制备出不同厚度的ITO薄膜。随着膜厚由16nm逐渐增大到271nm,其结晶程度得到增强,对应的载流子浓度由4.79×1020 cm-3增大到2.41×1021 cm-3,表面等离子体共振(SPR)波长由1802nm逐渐蓝移到1204nm,实现了近红外区域SPR波长较宽范围的可控调节。采用Drude自由电子气模型,对不同厚度ITO薄膜的SPR波长进行了理论计算,进一步证明了SPR波长的有效调节取决于膜厚对载流子浓度的影响作用。
The tin-doped indium oxide （ITO） thin films current （DC） magnetron sputtering method. The ITO are fabricated on the float glass substrates by the direct thin films with different thicknesses are fabricated by changing the deposition time. As the film thickness gradually increases from 16 nm to 271 nm, the crystallinity is enhanced and the corresponding carrier concentration is increased from 4.79× 10^20 cm^-3 to 2.41 × 10^21 cm^-3 . Thus the corresponding surface plasmon resonance （SPR） wavelength blueshifts from 1802 nm to 1204 nm. The controllable modulation of near infrared SPR wavelength within a relatively broad range is realized. The SPR wavelength of the ITO films with different film thicknesses are theoretically calculated by using the Drude free electron gas model, which further confirms that the effective modulation of SPR wavelength is determined by the influence of film thickness on carrier concentration.
作者
蔡昕旸
王新伟
李如雪
王登魁
方铉
房丹
张玉苹
孙秀平
王晓华
魏志鹏
Cai Xinyang;Wang Xinwei;Li Ruxue;Wang Dengkui;Fang Xuan;Fang Dan;Zhang Yuping;Sun Xiuping;Wang Xiaohua;Wei Zhipeng(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology Changchun, Jilin 130022, China;School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun Jilin 13022, China;State Key Laboratory of Supramolecular Structure and Material, Institute of Theoretical Chemistry Jilin University, Changchun, Jilin 130022, China)
出处
《激光与光电子学进展》
CSCD
北大核心
2018年第5期330-334,共5页
Laser & Optoelectronics Progress
基金
国家自然科学基金(61404009)
吉林省科技发展计划(20170520118JH)
长春理工大学校创新基金(XJJLG-2016-11)
