摘要
基于压阻效应和惠斯通电桥原理,设计了一种压阻式微压传感器;为了增大灵敏度,设计了一种折弯形的压敏电阻。从微压芯片敏感薄膜的设计、敏感电阻条的确定以及敏感电阻器位置的选取等方面考虑,设计了具有应力匀散效应的梁-膜结构并进行了工艺验证。验证结果表明:所设计的微压芯片灵敏度达到了24 mV/kPa,非线性优于0.2%FS。
A piezoresistive micro pressure sensor is designed,based on piezoresistive effect and Wheatstone Bridge Principle. Snake shape pressure sensitive resistor is designed to increase sensitivity. A design scheme is proposed,which considers sensitive thin-film design of micro pressure chip,confirmation of sensitive resistor strip and position selection of sensitive resistor,and process certification is carried out. The verification result shows that the sensitivity of the designed micro micro pressure chip can reach 24 mV/kPa,nonlinearity is prior to 0. 2 % FS.
作者
吴佐飞
尹延昭
田雷
王永刚
WU Zuo-fei;YIN Yan-zhao;TIAN Lei;WANG Yong-gang(The 49th Research Institute, China Electronics Technology Group Corporation, Harbin 150001, China)
出处
《传感器与微系统》
CSCD
2018年第6期73-74,78,共3页
Transducer and Microsystem Technologies
关键词
压阻效应
微压传感器
绝缘体上硅
梁-膜结构
piezoresistive effect
micro pressure sensor
silicon on insulator（SOI）
beam-diaphragm structure
