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Ultraviolet/ozone and oxygen plasma treatments for improving the contact of carbon nanotube thin film transistors 被引量:1

Ultraviolet/ozone and oxygen plasma treatments for improving the contact of carbon nanotube thin film transistors
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摘要 Carbon nanotube thin film transistor (CNT-TFF) is an emerging technology for future macroelectronics, such as chemical and biological sensors, optical detectors, and the backplane driving circuits for flat panel displays. The mostly reported fabrication method of CNT-TFT is a lift-off based photolithography process. In such fabrication process, photoresist (PR) residue contaminates the interface of tube-metal contact and deteriorates the device performance. In this paper, ultraviolet ozone (UVO) and oxygen plasma treat- ments were employed to remove the PR contamination. Through our well-designed experiments, the UVO treatment is confirmed an effective way of cleaning contamination at the tube-metal interface, while oxygen plasma treatment is too reactive and hard to control, which is not appropriate for CNT-TFTs. It is determined that 2-6 rain UVO treatment is the preferred window, and the best optimized treatment time is 4 rain, which leads to 15% enhancement of device performance. Carbon nanotube thin film transistor(CNT-TFT) is an emerging technology for future macroelectronics,such as chemical and biological sensors,optical detectors,and the backplane driving circuits for flat panel displays.The mostly reported fabrication method of CNT-TFT is a lift-off based photolithography process.In such fabrication process,photoresist(PR) residue contaminates the interface of tube-metal contact and deteriorates the device performance.In this paper,ultraviolet ozone(UVO) and oxygen plasma treatments were employed to remove the PR contamination.Through our well-designed experiments,the UVO treatment is confirmed an effective way of cleaning contamination at the tube-metal interface,while oxygen plasma treatment is too reactive and hard to control,which is not appropriate for CNT-TFTs.It is determined that 2–6 min UVO treatment is the preferred window,and the best optimized treatment time is 4 min,which leads to 15% enhancement of device performance.
出处 《Science Bulletin》 SCIE EI CSCD 2018年第12期802-806,共5页 科学通报(英文版)
基金 supported by the National Key Research and Development Program of China(2016YFA0201902) the National Natural Science Foundation of China(61621061) Beijing Municipal Science&Technology Commission(Z171100002017001)
关键词 Carbon nanotube Thin film transistor Contact UVO Oxygen plasma 晶体管 臭氧 血浆 电影 制造方法 光致抗蚀剂 面板显示
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