摘要
通过物理气相传输(PVT)法在石墨系统中制备了绿色、无色和琥珀色氮化铝(Al N)单晶,在金属系统中制备了琥珀色Al N单晶。晶体中杂质含量测试结果表明石墨系统中琥珀色的Al N晶体比绿色和无色Al N晶体C、Si杂质含量低1~2个数量级,金属系统中琥珀色Al N晶体杂质含量最低,C、Si、O元素含量均在1018cm-3级别。Al N晶体的吸收图谱和光致发光图谱的分析结果表明,Al N晶体存在着位于4.7 e V、3.5 e V、2.8 e V、1.85 e V的4个吸收峰,其中4.7 e V和3.5 e V的吸收峰导致了Al N吸收截止边的红移,该吸收峰分别源于碳占氮位(CN)的点缺陷和VAl与O杂质的复合缺陷,2.80 e V的吸收峰导致了Al N晶体的琥珀色,该吸收峰是C元素和O元素共同导致的,1.85 e V的吸收峰导致了Al N晶体的绿色,该吸收峰是Si元素和C元素导致的。
The greenness,colorless and yellowish aluminum nitride（ AlN） single crystals were fabricated by physical vapor transport（ PVT） method in graphite system,and yellowish AlN crystals were grown in metal system. The tested results of element content shown that C,Si impurity content of yellowish AlN crystals is 1-2 orders magnitude lower than that of greenness and colorless AlN crystals in graphite system,and the impurity content of yellowish AlN crystals grown in metal system is lowest of all which is1018 cm^-3. The analyzing results ofabsorption spectrum and photoluminescence spectrum show that four absorption peaks found in AlN crystals were located at 4. 7 eV,3. 5 eV,2. 8 eV and 1. 85 eV,respectively. The rad shift of absorbed edge of AlN crystal was origin 4. 7 eV and 3. 5 eV absorption peaks which originated from point defect of CNand complex defect of VAland O,respectively. The yellowish AlN crystal was origin 2. 8 eV absorption peak which was caused by C and O element,the greenness AlN crystal was origin 1. 85 eV absorption peak which was result in Si and C element.
作者
徐永宽
金雷
程红娟
史月增
张丽
齐海涛
XU Yong-kuan;JIN Lei;CHENG Hong-juan;SHI Yue-zeng;ZHANG Li;QI Hai-tao(The 46th Research Institute,China Electronics Technology Group Corporation,Tianjin 300220,Chin)
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2018年第7期1340-1345,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(51702297)
关键词
物理气相传输
杂质含量
缺陷
AlN晶体
physical vapor transport
impurity content
defect
AIN crystal
