摘要
采用CSMC 0.25μm工艺,设计了一种新型结构的过温保护电路,该电路利用正温系数电流电路和共源共栅电流镜产生一个高灵敏度的电压信号,通过CMOS施密特触发器产生控制信号控制芯片的通断,起到保护电路的作用。通过Spectre软件仿真验证,结果显示,在各个工艺角及电源电压波动的情况下,电路均能在芯片温度上升到165℃时关断,在芯片温度降到144℃时开启,迟滞值为21℃。
A new type of over-temperature protection（OTP） circuit was proposed based on 0.25 μm CMOS process. The circuit uses a positive temperature coefficient current circuit and a cascade current mirror to produce a high sensitivity voltage signal, through the Schmidt trigger control signal generated by the control chip on and off, play the role of protection circuit. The results show that, at different process corners and various supply voltages, the circuit can shut down when the temperature of the chip rise to 165 ℃ and re-open when the temperature drops to 144 ℃, the hysteresis is 21 ℃.
作者
葛兴杰
陆锋
GE Xingjie;LU Feng(College of Internet of Things,Jiangnan University,Wuxi 214000,China;China Electronics Technology Group Corporation No.5（Research Institute,Wuxi 214072,China)
出处
《电子与封装》
2018年第6期22-25,共4页
Electronics & Packaging
关键词
过温保护
新型结构
热关断
over temperature protection
new type
thermal shutdown
