摘要
硅通孔(Through Silicon Via,TSV)作为三维集成电路中的关键互连技术,用于连接不同层的芯片输入与输出。当通有交变电流的多个TSV相互靠近时,会产生邻近效应,造成TSV电阻的增大,从而影响TSV的传输性能。因此,提出了一种基于重心插值法计算TSV阵列交流电阻的方法,在对TSV横截面进行三角剖分和剖分顶点上电流强度确定的基础上,利用插值法计算TSV的交流功耗,利用交直流功耗比计算TSV的交直流电阻比,进而得出邻近效应影响下的TSV的交流电阻值。该方法实现了对任意规模、任意排布方式的TSV阵列交流电阻的计算,从而能够为三维集成电路中传输结构的设计提供指导和验证。最后,将算法的数值结果与商业求解器ANSYS Q3D的计算结果进行对比,实验结果表明,该方法的求解效果更佳。
Through Silicon Via（TSV）, as a key interconnection technology in 3D integrated circuits, is used to connect input and output of chips in different layers. When multiple TSVs with alternating current close to each other, will produce the proximity effect,which increases the resistance of the TSV, thus affecting the transmission performance of TSV. Therefore, a method of calculating AC resistance of TSV array based on barycentric interpolation is presented. On the basis of triangulation of TSV cross section and determining the current intensity of vertices, the AC power consumption of TSV is calculated by interpolation method, the AC to DC resistance ratio of TSV is calculated by the AC to DC power ratio, and then the AC resistance value of TSV under the influ-ence of proximity effect is obtained. This method can realize the calculation of AC resistance of TSV array in arbitrary scale and arrangement, and it will provide guidance and verification for the design of transmission structure in three dimensional integrated circuits. Finally, the numerical results of this method are compared with the results of commercial solver ANSYS Q3D. The experi-mental results show that the proposed method acquires better performance.
作者
赵景龙
缪旻
Zhao Jinglong;Miao Min(Information Microsystem Institute,Beijing Information Science ＆ Technology University,Beijing 100101,China)
出处
《电子技术应用》
2018年第7期46-51,共6页
Application of Electronic Technique
基金
国家自然科学基金项目(61674016)
北京市属高等学校高层次人才引进与培养计划项目长城学者培养计划)(CIT&TCD20150320)
北京市科技新星计划交叉学科合作资助课题(Z161100004916036)
关键词
硅通孔阵列
邻近效应
电流强度分布
交直流电阻比
TSV array
proximity effect
current intensity distribution
AC to DC resistance ratio
