摘要
高导热氮化硅陶瓷由于其优异物理、力学性能,被认为是兼具高强韧和高导热的最佳半导体绝缘基板材料,在大功率半导体器件基片的应用方面极具市场前景。本文总结了氮化硅陶瓷的性能特点及优势,从原料粉体、配方体系等角度介绍了高导热氮化硅陶瓷材料的研究现状,分析了影响氮化硅陶瓷热导率的关键因素;介绍了氮化硅基板现有成型技术,并对高导热氮化硅陶瓷基板材料未来发展及应用进行了展望。
Silicon nitride ceramics are considered as the best semiconductor insulating substrate materials because of their excellent physical and mechanical properties including high strength,high toughness and high thermal conductivity.High thermal conductivity silicon nitride ceramics have great market prospects in high-power semiconductor device substrateapplications.In this paper,the characteristics and advantages of silicon nitride ceramics are summarized,the research status are introduced from the aspects of raw material powder and formula system,and the key affecting factors of thermal conductivity are analyzed.The existingsubstrate molding technologies of silicon nitride substrates are introduced and the future development and application are prospected.
作者
郑彧
童亚琦
张伟儒
ZHENG Yu;TONG Ya-qi;ZHANG Wei-ru(Beijing Research Institute of Synthetic Crystals Co.Ltd.,Beijing 100018,China)
出处
《真空电子技术》
2018年第4期13-17,共5页
Vacuum Electronics
基金
国家重点研发计划(2017YFB0310400)
北京市科技计划课题(Z171100002017015)
关键词
半导体
陶瓷绝缘基板
氮化硅陶瓷
热导率
Semiconductor
Ceramic substrate
Silicon nitride ceramic
Thermal conductivity
