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Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction 被引量:1

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction
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摘要 Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multiquantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy. Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multiquantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy.
作者 Yangfeng Li Yang Jiang Shen Yan Haiyan Wu Junhui Die Caiwei Wang Ziguang Ma Lu Wang Haiqiang Jia Wenxin Wang and Hong Chen 李阳锋;江洋;迭俊珲;王彩玮;严珅;吴海燕;马紫光;王禄;贾海强;王文新;陈弘(Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;University of Chinese Academy of Sciences, Beijing 100049, China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第9期157-161,共5页 中国物理B(英文版)
基金 Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400302 and 2016YFB0400603) the National Natural Science Foundation of China(Grant Nos.11574362,61210014,and 11374340) the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission,China(Grant No.Z151100003515001)
关键词 multiple quantum wells p-n junction light-to-electricity PHOTOCURRENT multiple quantum wells p-n junction light-to-electricity photocurrent
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