摘要
以氧化亚硅为原料,利用氧化亚硅的歧化反应制备纳米硅颗粒、二氧化硅均匀分散的前驱体,然后利用低残余碳的原位高温固相分解制备得到了多孔结构的硅碳材料,并对材料的表面及微观结构和电化学性能进行了表征。SEM显示材料呈微米级多孔球形分布,该结构可以有效吸收充放电过程中硅的晶格膨胀。XRD和TEM结果表明,氧化亚硅材料在950℃开始发生歧化反应。首次比容量达到了1300.2mAh/g,库伦效率达到了84.5%。硅碳石墨复合材料首次比容量为462.6mAh/g,库伦效率为90.5%,循环50圈后比容量为441.7mAh/g,仍远高于常见石墨负极。
The disproportionation reaction of silicon oxide(SiO) was performed to access silicon nanoparticles and a precursor of well-dispersed SiO2. Subsequently, the in-situ decomposition of trace amount of carbon in residues resulted in porous Si-C materials at high temperature, which was then evaluated morphologically and electrochemically. The SEM images of these materials show porous microspheres with an excellent resistance of lattice expansion in the charging/discharging cycle. SiO starts to disproportionate at 950 ° C as indicated by the XRD and TEM measurements. The initial specific capacity was examined to be 1300.2 mAh/g, and the initial coulombic efficiency of 84.5% was achieved for resulting materials. In contrast, silicon carbon graphite composites show values of 462.6 mAh/g and 90.5% in the first cycle, and they remain 441.7 mAh/g after 50 cycles of operation, a capacity much higher than those of commonly used graphite anodes.
作者
宋英杰
马倩倩
伏萍萍
徐宁
SONG Ying-jie;MA Qian-qian;FU Ping-ping;XU Ning(Tianjin Ba Mo Polytron Technologies Inc,Tinajin 300132,China)
出处
《世界有色金属》
2018年第15期266-267,共2页
World Nonferrous Metals
关键词
歧化反应
低残余碳
多孔
Disproportionation reaction ;Low residual carbon, ;Porousity