期刊文献+

基于忆阻器的逻辑门和二位吠陀乘法器设计 被引量:2

Design of the Logic Gate and Two-bit Vedic Multipliers Based on Memristors
下载PDF
导出
摘要 忆阻器是一种新型的无源元件,它拥有纳米级的尺寸、非线性以及记忆功能等特点,在模型分析、基础电路设计、电子元件设计、集成电路设计、神经突触等方面得到了运用.该文设计了一种混合CMOS忆阻器逻辑门电路,使用基于忆阻器的与门和或门、基于CMOS工艺的反相器,混合实现了基于忆阻器的异或门电路,进而组合已实现的逻辑门电路完成二位吠陀乘法器的设计.实验结果表明,设计的二位吠陀乘法器,相较于已有的二位吠陀乘法器,在完成相同功能时,功耗约为原来的80%和面积开销为原来的76%. Memristor is a new type of passive components,it has the characteristics of nanometer size, nondinearlty and memory function. Aad it has been applied in model analysis, basic circuit design, electronic component design, integrated circuit design, synaptic and other aspects. In this paper, a hybrid CMOS memristor logic gate is designed, which uses an AND gate and OR gate based on memristor and an inverter based on CMOS process to realize an exclusive OR gate circuit based on memristor. Then, the two-bit Vedic multipliers are implemented using the memristor logic gate designed in this paper. The experimental results show that the two bit Vedic multipliers designed in this paper compared with the existing two-bit Vedic multipliers, consumes approximately 80% of the original power and 76% of the area overhead when performing the same function.
作者 刘海峰 方芳 王伟 王彬 LIU hai-feng;FANG Fang;WANG Wei;WANG Bin(School of Computer and Information,Hefei University of Technology,Hefei 230009,China;School of Management,Hefei University of of Technology,Hefei 230009,China)
出处 《微电子学与计算机》 CSCD 北大核心 2018年第10期46-52,共7页 Microelectronics & Computer
基金 国家自然科学基金重点项目(61432004) 国家自然科学基金(61474035 61204046 61306049) 安徽省科技攻关项目(1206c0805039) 安徽省自然科学基金(1508085QF129) 教育部新教师基金(20130111120030)
关键词 忆阻器 无源元件 CMOS 逻辑门电路 吠陀乘法器 memristor passive components CMOS logic gate circuit vedic multiplier
  • 相关文献

参考文献1

二级参考文献37

  • 1CHUA L O.Memristor-the missing circuit element[J].IEEE Trans Circuit Theory,1971,18(5):507-519.
  • 2STRUKOV D B,SNIDER G S,STEWART D R,et al.The missing memristor found[J].Nature,2008,453:80-83.
  • 3WILLIAMS S.How we found the missing memristor[J].IEEE Spectrum,2008,45(12):24-31.
  • 4CHUA L O,KANG S M.Memristive devices and systems[J].Proc IEEE,1976,64(2):209-223.
  • 5DI V M,PERSHIN Y V,CHUA L O.Circuit elements with memory:memristors,memcapacitors,and meminductors[J].Proc IEEE,2009,97(10):1717-1724.
  • 6OSTER G F.A note on memristors[J].IEEE T Circuits Syst,1974,AS21(1):152.
  • 7SCHROEDER R C.Memristor mechanics[J].IEEE Spectrum,2009,46(2):8.
  • 8CHEN G.Leon Chua's memristor[J].IEEE T Circuits Syst Mag,2008,8(2):55.
  • 9WANG F Y.Memristor and memristive switching mechanism[J].J Nanophotonics,2008,2:20304.
  • 10KIM T H,JANG E Y,LEE N J,et al.Nanoparticle assemblies as memristors[J].Nano Lett,2009,9(6):2229-2233.

共引文献15

同被引文献8

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部