摘要
基于GaAs p HEMT在微波领域的卓越性能,设计并实现了一款K波段GaAs功率放大器电路。根据阻抗匹配电路、三级级联放大结构来实现输出功率为2 W的K波段GaAs功率放大器。采用ADS软件对电路原理图进行了电学参数优化、版图绘制和电磁场仿真。采用0.25μm栅长GaAs p HEMT工艺完成电路的设计,放大器输出输入端口均匹配到50Ω。ADS仿真表明,功率放大器工作在21~24.5 GHz时,该放大器的输出功率大于33 d Bm,功率附加效率大于25%,功率增益大于19 d B,电路尺寸为2.5 mm×3.2 mm。
Based on the excellent performance of GaAs pHEMT in microwave field, a K-band GaAs power amplifier circuit is designed and implemented. Impedance matching structures, three stages cascade structure are applied to achieve 2 W high power amplifier. According to the circuit theory and the amplifier performance indicators, the circuit schematic is designed with ADS software, and the electrical parameters optimization, layout drawing and electromagnetic simulation are carried out. The design of the amplifier was accomplished with GaAs pHEMT 0.25 μm gate length process, the amplifier was designed to fully match with 50 Ω. The ADS simulation shows that the output power of the amplifier is more than 33 dBm, the power added efficiency is more than 30%, and the power gain is more than 19 dB at the frequency 21 GHz to 24.5 GHz. The circuit size is 2.5 mm×3.2 mm.
作者
陆雨茜
陈华康
高博
龚敏
LU Yuxi;CHEN Huakang;GAO Bo;GONG Min(College of Physical Science and Technology,Sichuan University,Chengdu 610065,China)
出处
《电子与封装》
2018年第10期26-28,共3页
Electronics & Packaging
关键词
砷化镓
K波段
单片微波集成电路
功率放大器
高功率
GaAs
K-band
monolithic microwave integrated circuit （MMIC）
power-amplifier
high power
