摘要
氢引起微波芯片性能退化,降低沟道载流子的浓度,改变金属栅与半导体接触的肖特基势垒,密封腔内氢反应生成水,氢致裂纹,金属被氢化;通过优化芯片设计、优化工艺材料和增加除氢工序,可有效降低微波模块内部的氢含量。
Hydrogen can cause the degradation of microwave chip performance, reduce the concentration of channe carriers, change the Schottky barrier of the metal gate to the semiconductor, react to form water in the sealed chamber, cause cracks, bring in metal hydride. By optimizing the chip design, optimizing the process materials and adding the hydrogen removal process, the hydrogen in the microwave module can be effectively reduced.
出处
《信息技术与标准化》
2018年第8期61-64,共4页
Information Technology & Standardization
关键词
氢效应
失效机理
除氢工序
hydrogen effect
failure mechanism
hydrogen removal process
