摘要
利用Ar^+等离子体处理ZnO纳米线,通过对不同处理时间后的样品进行变温光谱测试,分析了处理前后ZnO发光性质的变化。结果表明:随着处理时间的增加,其室温带边发光强度先增加后减小,处理90 s时是原生样品的2.45倍,位于可见区的缺陷发光得到了抑制。通过10 K下发光谱的对比,分析了等离子体作用的机理。当处理时间较短时,Ar^+等离子体可以有效除去ZnO纳米线表面的杂质和缺陷,提高其紫外发光强度;而处理时间较长时,将引入更多的深施主态缺陷,破坏其晶体结构,从而降低其发光性能。
The ZnO nanowires are treated by the Ar^＋ plasma and the changes of luminescence properties before and after treatments are analyzed by the test of temperature-dependent spectra under different treatment time. The results show that the near band edge emission intensity at room temperature increases first and then decreases with the increase of treatment time. As for the treatment time of 90 s, the intensity is 2.45 times that of the as-grown sample and simultaneously the defect-related photo-luminescence in visible region is suppressed. The mechanism of plasma treatment is analyzed by the comparison among luminescence spectra at 10 K. When the treatment time is short, the impurities and defects on the ZnO nanowire surfaces can be effectively removed by the Ar^＋ plasma and thus ultraviolet luminescence intensity is enhanced. When the treatment time is relatively long, the crystal structure is broken due to the introduction of more deep donor-state defects and thus the luminescence property is reduced.
作者
胡颖
李浩林
王登魁
贾慧民
魏志鹏
王晓华
方铉
房丹
王新伟
Hu Ying;Li Haolin;Wang Dengkui;Jia Huimin;Wei Zhipeng; Wang Xiaohua;Fang Xuan;Fang Dan;Wang Xinwei(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China; School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, China)
出处
《中国激光》
EI
CAS
CSCD
北大核心
2018年第10期132-136,共5页
Chinese Journal of Lasers
基金
国家自然科学基金(11674038
61704011
61474010
61674021
61574022
61504012)
吉林省科技发展计划重点科技攻关项目(20160204074GX)
吉林省科技发展计划(20160520117JH
20160519007JH
20170520118JH)
长春理工大学科技创新基金(XJJLG-2016-11
XJJLG-2016-14)
