摘要
InAs-based interband cascade lasers（ICLs） with InAs plasmon waveguides or InAs/AlSb superlattice（SL） waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the lasers with SL waveguides were 37 A/cm;at 77 K in continuous wave mode. The operation temperature of these lasers reached room temperature in pulsed mode. Compared with the thick InAs n++ plasmon cladding layer, the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4 μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides.
InAs-based interband cascade lasers(ICLs) with InAs plasmon waveguides or InAs/AlSb superlattice(SL) waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the lasers with SL waveguides were 37 A/cm^2 at 77 K in continuous wave mode. The operation temperature of these lasers reached room temperature in pulsed mode. Compared with the thick InAs n++ plasmon cladding layer, the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4 μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides.
基金
Project supported by the National Natural Science Foundation of China(Nos.61790583,61774150,61774151)
the National Basic Research Program of China(No.2014CB643903)
