摘要
通过金属有机化学气相沉积（MOCVD）高温外延生长的未掺杂非极性α-AlGaN半导体薄膜,制备了金属–半导体–金属（MSM）结构的深紫外光电探测器,研究了在α-AlGaN半导体薄膜表面磁控溅射不同时间的SiO2纳米颗粒对α-AlGaN MSM结构的深紫外探测器性能的影响。结果表明：5 V偏压下,探测器光谱响应峰值提高了大约3个数量级,深紫外近可见抑制比高达10^4,具有很好的深紫外特性,同时暗电流也下降了2-3个数量级,磁控溅射SiO2纳米颗粒提升了α-AlGaNMSM结构深紫外探测器性能。
The metal-semiconductor-metal （MSM） structure deep ultraviolet （UV） photodetector was fabricated on the nonpolar a-AIGaN grown via metalorganic chemical vapor deposition （MOCVD） and high-temperature treatment. The effect of passivation layers with silica （SiOz） nanoparticles at different time （Le., SNPs for 5 min and SNPs for 10 min） on the optical and electrical properties of the nonpolar a-A1GaN MSM deep UV photodetector was investigated. The results indicate that the surface passivation of SiO2 SNPs is an effective way to enhance the performance of the nonpolar a-A1GaN MSM deep UV photodetector. The fabricated devices were characterized via the measurements of the spectral response and the dark I-V characteristics. The peak responsivity is enhanced by more than 3 orders of magnitude after the deposition of SiO2 SNPs, and the ratio of UV to visible reaches 104. Also, the dark current of the a-A1GaN MSM deep UV photodetector is decreased by 2-3 orders of magnitude when SiO2 SNPs are added.
作者
贾辉
徐建飞
石璐珊
梁征
张滢
JIA Hui;XU Jianfei;SHI Lushan;LIANG Zheng;ZHANG Ying(Basic Courses Department,China Maritime Police Academy,Ningbo 315801,Zhejiang,China;Research Center,Ningbo Institute of Science ＆Technology Information,Ningbo 315040,Zhejiang,China;Susquehanna International Group,Bala Cynwyd,Philadelphia PAl 9004,USA)
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2018年第9期1304-1308,共5页
Journal of The Chinese Ceramic Society
基金
浙江省教育厅科研项目(Y201737504)资助
