摘要
对一种集成稳压器的失效问题进行了研究并分析了失效机理。通过内部目检、微光分析、扫描电镜及能谱分析,定位了集成稳压器的失效点。采用仿真和实验分别对稳压器的失效原因进行了分析和验证,搭建了输出端到公共端存在电流通路的等效电路,计算并仿真了等效电路的I-V模型,测试结果表明,仿真I-V特性曲线与实际I-V特性曲线高度一致。通过复现试验,确认了导致稳压器失效的原因是输入端的高能量外部过电应力致使过热保护管开启,并在过流与过热的条件下产生与电流方向一致的电迁移痕迹,从而使过热保护管的集电极和发射极短路,引发稳压器失效。
Failure problems of an integrated voltage regulator were researched and the failure mechanism were analyzed. The failure point of the integrated voltage regulator was identified by optical inspection,emission microscope,scanning electron microscopy and energy dispersive spectromete. An failure reason of the regulator was analyzed and verified with simulation and experiment. The equivalent circuit between the output port and the common port was build,and the I-V model of the circuit was calculated and simulated. Test results indicate that the simulated I-V characteristic curve and the real I-V characteristic curve are highly consistent. Based on the reappearance test,the failure reason of the voltage regulator is an external high power electrical overstress applied to the input port. The electrical overstress made the overheat protection transistor open,forming an electromigration mark consistent with the current direction under overheat and overcurrent. The electromigration mark caused short circuit between the collector and the emitter of the overheat protection transistor,making the voltage regulator fail.
作者
廉鹏飞
刘楠
孔泽斌
吉裕晖
陈萝娜
Lian Pengfei;Liu Nan;Kong Zebin;Ji Yuhui;Chen Luona(No.808 Institute,Shanghai Academy of Spaceflight Technology,Shanghai 201109,China;No.811 Institute,Shanghai Academy of Spaceflight Technology,Shanghai 200233,China)
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第11期869-875,共7页
Semiconductor Technology
基金
XXX预先研究项目(050401)
关键词
集成稳压器
失效
过热保护
过电应力
电迁移
integrated voltage regulator
failure
overheat protection
electrical overstress
electromigration
