摘要
随着大功率电力电子器件的快速发展,通过压力封装的IGBT器件得到了广泛关注。针对新型压接式大功率IGBT器件的设计,开展了基于有限元的电场仿真计算,建立了IGBT芯片子模组的仿真模型,确定了电场集中的3个区域,即纵向间隙、横向间隙、银片与框架间隙3处,并分析提出了在相应的区域增加半导体均压层和增大间隙等切实可行的改进措施。
With the development of large power electronic devices, novel press pack IGBT devices through the package of pressure contact have attracted widely attention in recent years. This paper aims at the design of a new type high power press pack IGBT device, and builds a simulation model of IGBT sub-module based on the finite element analysis of electric field calculation. Three areas of electric field intensity are proposed and analyzed, namely horizontal gap, vertical gap, and the gap between silver and framework. According to the calculation results, practical measures can be applied, such as applying semicondueting layers and/or increasing clearance in the corresponding region.
作者
郑重
杜赫
邱馨仪
张朋
李现兵
李金元
ZHENG Zhong;DU He;QIU Xinyi;ZHANG Peng;LI Xianbing;LI Jinyuan(Beijing Key Laboratory of HV ＆ EMC,North China Electrical Power University,Beijing 102206,China;Global Energy Interconnection Research Institute Co.,Ltd.,Beijing 102209,China)
出处
《智慧电力》
北大核心
2018年第10期55-62,共8页
Smart Power
基金
国家重大研发专项资助项目(2016YFB 0901800)
国网公司科技项目SGRIZLKJ(2016)125)~~
