期刊文献+

基于田口法的在玻璃基板上溅射ITO薄膜制作工艺研究 被引量:2

The Study on the Process of ITO Film Sputtered on Glass Based on Taguchi Method
下载PDF
导出
摘要 利用射频磁控溅射方式将氧化铟锡(ITO)沉积在玻璃基板上,设定温度、压力、溅射功率为主要参数,每个参数均有3个水平,运用田口实验方法设计L9直交表,质量目标设定为方阻,以变异数分析得到的结果作为最优工艺参数条件,并测量膜厚、透光率。以X光衍射仪分析结晶状况、SEM观察结构及生长型态来了解其性质。结果显示功率对方阻的影响最大,贡献度占91%,而功率大,薄膜厚度越厚,晶粒粒径较大,结晶性较强,方阻减小及透过率降低。由于结晶性好也提高透光率,膜厚100~300nm时,透光率80%以上。最优工艺参数为温度230℃、功率300 W及压力在1.5mTorr下有方阻最小。 This study is to sputter the indium tin oxide(ITO)film on glass by RF magnetron sputtering system with the design of temperature,working pressure and input energy as the main parameters,in which each parameter with three levels.The L9 orthogonal array is designed by using Taguchi experiment method.The quality target is set to sheet resistance.The results obtained from the analysis of the number of variants have been taken as the optimum conditions of the process parameters,and the film thickness and light transmittance are measured.Characterization feature of sheet resistance of coatings was explored through.Scanning electron microscope(SEM)and X-ray diffraction(XRD)are applied for observing grains and crystal structures to understand the property.The results indicate that the input energy appears the highest effect on sheet resistance,with the contribution accounted for 91%.While the thicker film is from the bigger power,with the result of the bigger the grain size,the stronger the crystallization,the smaller the sheet resistance and the lower the transparency.The transmittance is also improved due to good crystallization.The transparency is over80% with the thickness of film from 100 nm to 300 nm.The optimal process parameters to get the lowest sheet resistance are 230℃temperature,300 Winput energy,and working pressure below 1.5mtorr.
出处 《长春工程学院学报(自然科学版)》 2016年第4期25-28,共4页 Journal of Changchun Institute of Technology:Natural Sciences Edition
基金 福建省中青年教师教育科研项目(JA15682)
关键词 氧化铟锡(ITO) 田口法 溅射 ITO taguchi method sputtering
  • 相关文献

参考文献7

二级参考文献63

  • 1沈玫,纪建超,贺会权.低温沉积ITO透明导电膜的研究[J].材料工程,2006,34(z1):17-19. 被引量:3
  • 2王树林,夏冬林.ITO薄膜的制备工艺及进展[J].玻璃与搪瓷,2004,32(5):51-54. 被引量:17
  • 3茅昕辉,陈国平,陈公乃,张随新,张旭苹.直流磁控反应溅射沉积ITO透明导电膜的研究[J].光电子技术,1995,15(1):72-78. 被引量:5
  • 4王军,成建波,饶海波,蒋亚东,杨刚.磁控溅射低阻ITO薄膜的气体参数优化[J].压电与声光,2007,29(1):115-117. 被引量:9
  • 5[1]LEWIS B G.Applications and processing of transparent conducting oxides[J].MRS Bulletin,2000,8:22-27.
  • 6[2]RAY S,BANERJEE R,BASU N,et al.Proper ties of tindeped indium oxide thin films prepared by magnetron sputtering[J].Appl Phys,1983,54(6):3497-3501.
  • 7[3]ZHANG D H,MA H L.Scattering mechanisms of charge carriers in transparent conducting oxide films[J].Appl Phy,1996,A62:487-492.
  • 8[4]DAVISL.Properties of transparent oxides deposited at room temperature[J].Thin Solid Films,1993,236:1-5.
  • 9Ma H L,Zhang D H,Ma P,et al.Preparation and properties of transparent conducting indium tin oxide films deposited by reactive evaporation[J].Thin Solid Films,1995,263:105-110.
  • 10Higuchi M,Uekusa S,Nakano R,et al.Micrograin structure influence on electrical characteristics of sputtered indium oxide films[J].Appl Pbys Lett,1993,74(11):6710-6713.

共引文献23

同被引文献21

引证文献2

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部