摘要
用XPS分析了CdS薄膜的结构。硫化镉薄膜是用化学沉积法制备的胶体颗粒,然后再通过真空蒸发法在平面玻璃上形成的多晶薄膜。XPS分析表明CdS薄膜中的Cd3d和S2P峰值均比块状CdS向高能方向偏移了10eV。这主要是由于表面效应所致。
In this paper, the structure of CdS thin films was analyzed by XPS. The CdS grains were firstly prepared by CBD, then polycrystalline thin films of CdS were formed on the plane glass by vacuum evaporation. The XPS analysis showed that the values of Cd3d and S2p peak for films were shifted towards high energy, and greater than 10 eV as compared with the body CdS. This can be ascribed to the surface effect of CdS thin films.
出处
《光电子技术》
CAS
2002年第3期141-144,共4页
Optoelectronic Technology
基金
国家863基金项目(2001AA513011)
光电技术系统教育部重点实验室资助课题
