摘要
通过增加一次高压注入,对0.8μm SOI CMOS工艺平台进行智能电压扩展.在SIMOX材料上设计并实现了兼容该工艺的横向高压器件,实现了低压CMOS与高压LDMOS的单片集成.在硅膜厚度为205nm、埋氧层厚度为375nm的SIMOX材料上,研制出阈值电压、击穿电压分别为1.3V、38V的高压LDMOS.此高低压兼容SOI技术可将高低压器件单片集成,节约了芯片成本,提高了可靠性.
Smart voltage extension, based on 0.8μm SOI CMOS process, is realized by adding a high voltage implantation. Low voltage CMOS and high voltage LDMOS, compatible with the total dose radiation-hard 0.8μm SOI CMOS process, can be integrated monolithically on SIMOX wafer. The breakdown voltage of 38V, and the threshold voltage of 1.3V, are obtained for LDMOS on SIMOX wafer, where the top silicon thickness is 205nm, and the buried oxide thickness is 375nm. Using this technology, the cost of integrated circuit is reduces and the reliability is improved.
出处
《西南民族大学学报（自然科学版）》
CAS
2009年第3期622-625,共4页
Journal of Southwest Minzu University(Natural Science Edition)
