摘要
针对微米与亚微米器件对自对准硅化物技术的要求,本文报道了沟道长度为1微米的自对准CoSi_2硅化物化MOSFET(SALICIDE)技术的实验结果.首先研究了CoSi_2薄膜形成动力学和膜性质,随后着重研究并讨论了与自对准CoSi_2技术有关的一些重要问题,包括各向异性刻蚀、选择腐蚀和栅侧壁氧化物上的桥接试验等,最后给出了 1μm沟道长度的自对准 CoSi_2 SALICIDE MOS晶体管的电学性能实验结果.
The experimental results of the CoSi_2 self-aligned silicidation (SALICIDE) for one mi-cron MOS devices are reported. Some important technical problems associated with CoSi_2SALICIDE, including self-aligned CoSi_2 formation, anisotropic RIE, selective etching and thebridging monitor over gate sidewall spacer have been studied and discussed.The electricalcharacteristics of the CoSi_2 SALICIDE MOS transistors with one micron channel length aregiven.
