摘要
介绍了用电子束光刻、反应离子刻蚀方法制备硅量子线和用电子束光刻、电子束蒸发以及剥离技术制备纳米金属栅的工艺方法;用这种工艺在p型SIMOX硅片上成功制造了一种单电子晶体管;在器件的电流电压特性上观测到明显的库仑阻塞效应和单电子隧穿效应以及在固定的Vds电压下,源漏电流(Ids)随柵极电压(Vgs)变化的一系列周期变化的电流振荡特性。
Process of Si quantum wire based on EBL and RIE and process of nano-structuremetal gate based on EBL, electron beam evaporation and lift-off techniques are reported in thispaper. Single electron transistor (SET) on p-type SIMOX substrates is also fabricated based on theprocesses. Coulomb blockade and single electron tunneling are observed and Ids-Vgs characteristicsas a function of Vgs when temperature is varied are also obserred in the SET.
出处
《半导体技术》
CAS
CSCD
北大核心
2002年第11期70-73,共4页
Semiconductor Technology
基金
香港RGC的支持项目 (HKUST6086/97E)
关键词
纳米结构
硅
单电子晶体管
库仑阻塞
单电子隧穿
nano-structure
single electron transistor
coulomb blockade
single elec-tron tunneling
