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H^+辐照前后C-SiC涂层的XPS分析

XPS analysis for the C-SiC coatings before and after H^+ ion irradiation
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摘要 对不锈钢基体上离子束混合沉积的C -SiC涂层进行了H+ 辐照模拟试验 ,由SIMS测量H+ 辐照前后氢的浓试分布 ,采用沟电子能谱 (XPS)对H+ 辐照前后涂层元素C和Si进行了内层电子结合能的测量分析 ,研究C及Si的化学键态的变化与H的关系 。 Simulating experiments of H + irradiation were made for the C-SiC coatings deposited by ion beam mixing on stainless steel substrates. Hydrogen depth profiles of SIMS spectra were measured for the specimen before and after H + ion irradiation. XPS was used to analyze the chemical bonding energy for C and Si elements of coatings before and after H + ion irradation. Relationship between the changes of the chemical bond states for the elements of the C-SiC films and hydrogen was studied. Related mechanism of hydrogen resistant property for the C-SiC coatings was discussed.
出处 《南昌航空工业学院学报》 CAS 2002年第3期33-37,共5页 Journal of Nanchang Institute of Aeronautical Technology(Natural Science Edition)
基金 获国家自然科学基金 (5 97810 0 2 ) 中国工程物理研究院科研基金资助
关键词 涂层 XPS 沟电子能谱 碳化硅 薄膜 阻氢性能 C-SiC coating H + ion irradiation XPS
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  • 1黄宁康,中国激光

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