摘要
通过对IGBT模块栅极电压米勒平台的时延与结温Tj的关系进行研究,首先从理论角度分析了米勒平台时延温度特性;其次设计了稳定可靠的米勒时延测量系统实现栅极米勒平台时间延迟的精确测量;最后,在一定条件(恒定电压、恒定电流)下对米勒平台的时延与结温的关系进行了实验验证。理论与实验均证实,米勒平台的时间延迟随结温的变化而变化,且二者呈现非常好的线性比例关系,结温Tj每升高1℃,栅极电压米勒平台时间延长0.74ns左右。
The relationship between time delay of gate voltage Miller plateau on insulated gatebipolar transistor (IGBT) module and junction temperature has been researched in this paper. Firstly,the temperature characteristic of Miller plateau time delay has been analyzed. Secondly, a measurementsystem of gate voltage Miller plateau has been set up, which could measure the delay time of Millerplateau accurately and reliably. Finally, experiments verify the temperature characteristic of Millerplateau time delay. Both the simulation and the experimental results show that the time delay of Millerplateau varies with the junction temperature, which has a good linear relationship. In this paper, thetime delay of Miller plateau increases 0.74 ns as the junction temperature increases 1℃.
作者
方化潮
郑利兵
王春雷
方光荣
韩立
Fang Huachao;Zheng Libing;Wang Chunlei;Fang Guangrong;Han Li(School of Information University of Chinese Academy of Science Beijing 100190 China;Institute of Electrical Engineering Chinese Academy of Science Beijing 100180 China)
出处
《电工技术学报》
EI
CSCD
北大核心
2016年第18期134-141,共8页
Transactions of China Electrotechnical Society
基金
国家重大科技专项02专项:智能电网高压芯片封装与模块技术研发及产业化资助项目(2011ZX02603)
关键词
IGBT
栅极电压
米勒平台
温度特性
Insulated gate bipolar transistor
gate voltage
Miller plateau
temperature characteristic
