摘要
采用微波等离子化学气相沉积法,使用甲烷、氢气和二氧化碳作为反应气氛进行金刚石膜的沉积研究。实验中通过添加并改变气体组分中CO_2/CH_4比值金刚石膜在高碳源浓度条件的可控性生长。通过Raman光谱、X射线衍射(XRD)及SEM对金刚石膜的沉积质量,生长取向及表面形貌进行表征。结果表明,在其他参数保持一致时,在高甲烷下,只改变CO_2/CH_4比值可明显改变金刚石膜的表面形貌并提高金刚石膜的质量,实现纳米、(111)面及(100)面微米金刚石膜的可控性生长。
Microwave plasma chemical vapor deposition was applied to deposited diamond films in a CH4/H2/CO2 system.The controllable growth of diamond films in a CH4 rich system was achieved by varying the flow ratio of CO2/CH4.By using the Raman spectra,X-ray diffraction and SEM,the qualities,growth orientations and the surface morphologies were characterized. The results showed that only by changing the flow ratio of CO2/CH4 can significantly affected the surface morphologies and qualities of deposited diamond films and achieved the controllable growth of nano-scale,(111)-facetedand(100)-faceted diamond films.
作者
孙祁
汪建华
陈义
翁俊
刘繁
SUN Qi;WANG Jian-hua;CHEN Yi;WENG Jun;LIU Fan(Key Laboratory of plasma chemistry and new materials,Wuhan Institute of Technology,Wuhan 430205,China)
出处
《真空与低温》
2017年第1期58-62,共5页
Vacuum and Cryogenics
基金
国家自然科学基金项目(11175137)
湖北省教育厅科学技术研究计划优秀中青年人才项目(Q20151517)
武汉工程大学科学研究基金项目(K201506)
