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Ag修饰C掺杂TiO_2薄膜的光电响应性能

Photoelectric Performance of Ag Modified Carbon-Doped TiO_2 Thin Film
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摘要 采用电泳沉积法在Ti片基底表面形成TiC纳米薄膜,然后在不同温度下对TiC薄膜进行热氧化制备了C掺杂TiO_2(记作C-TiO_2)薄膜,进一步在不同浓度的AgNO_3溶液中利用光还原沉积法在C-TiO_2薄膜表面负载了Ag纳米颗粒。结果表明:在550~650℃热氧化温度范围,生成的CTiO_2薄膜由锐钛矿相和金红石相的混晶构成,高于700℃时锐态矿相全部转化为金红石相;C-TiO_2薄膜均表现出一定的可见光光电响应性能,且表面负载Ag能显著改善薄膜的性能;650℃氧化生成的C-TiO_2薄膜,在浓度0.03mol/L的AgNO_3溶液中负载Ag后制备的Ag-C-TiO_2薄膜呈现出最佳的光电响应性能。 Titanium carbide(TiC)films were prepared by electrophoretic deposition process on Ti substrate in an aqueous suspension of nanosized TiC powder,and then carbide-doped titanium dioxide(C-TiO_2)films were fabricated by heating the TiC films at 550~750℃for 3 hin air.Ag nanoparticles were deposited on the surface of C-TiO_2 film in different concentration of AgNO_3 solution by photo-reduction deposition.XRD results show that in the range of 550~650 ℃thermal oxidation temperature,C-TiO_2 films consisted of anatase-rutile mixed crystals,and when the oxidation temperature was higher than 700℃,the crystalline phase of C-TiO_2 films was pure rutile.The C-TiO_2 films all showed visible-light response behavior.The Ag-C-TiO_2 films had better photoelectric properties than C-TiO_2 films,and the Ag-C-TiO_2 film prepared at 650℃ oxidation temperature and 0.03 mol/L AgNO_3 concentration showed optimal performance.
作者 落全伟 李秀燕 任超 刘瑞萍 曹铃 范明明 LUO Quanwei;LI Xiuyan;REN Chao;LIU Ruiping;CAO Ling;FAN Mingming(College of Physics and Optoelectronics,Taiyuan University of Technology,Jinzhong Shanxi 030600,China)
出处 《太原理工大学学报》 CAS 北大核心 2018年第2期228-233,共6页 Journal of Taiyuan University of Technology
基金 国家自然科学基金青年基金资助项目(51401142)
关键词 二氧化钛 碳掺杂 银负载 光电响应性能 TiO2 carbon doping Ag deposition photoelectric properties
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