摘要
二硫化钼(MoS_2)优异的理化性能在光电晶体管领域的应用具有极大潜力。文中研究了化学气相沉积法(CVD)法生长的MoS_2薄膜制备的光电晶体管的性能。随着光照强度的增加,光电流也随之增加,但幅度逐渐下降,由于其价带上的电子极易吸收能量跃迁到导带从而产生光电流,但最终会达到响应饱和状态。对基于二硫化钼光电晶体管性能的研究有助于二硫化钼材料在光电传感器上的应用。
The excellent physical and chemical properties of molybdenum disulphide(MoS 2)have great potential in the application of optoelectronic transistor.The property of monolayer MoS 2 phototransistors based on CVD method was studied.The current in the phototransistors was increased with the increasing of light intensity,but the rate of increase was reduced.As the electron from the valence belt is easy to absorb energy to move to the conduction band,the light current can be generated,and eventually the response saturation state was achieved.The understanding of the phototransistor can help to application of molybdenum disulphide material on photoelectric sensor.
作者
杨启志
方佳佳
王权
YANG Qi-zhi;FANG Jia-jia;WANG Quan(School of Mechanical Engineering,Jiangsu University,Zhenjiang 212013,China;Integrated National Key Laboratory of Sensing Technology,Chinese Academy of Sciences,Shanghai 200050,China)
出处
《仪表技术与传感器》
CSCD
北大核心
2018年第3期10-13,共4页
Instrument Technique and Sensor
基金
国家自然科学基金项目(51675246)；镇江市重点研发计划项目(GY2016014)
