摘要
采用Cd_(0.9)Zn_(0.1)Te晶圆作为溅射靶材,利用射频磁控溅射法在FTO衬底上制备了CdZnTe薄膜。系统研究了溅射氩气压从0.08~1Pa的变化对CdZnTe薄膜的形貌、结构、成分和电学特性的影响。随着氩气压的降低,薄膜晶粒尺寸下降,形貌由柱状结构转化为片状结构、再转化为细小的颗粒状结构。同时,CZT薄膜逐渐呈现(111)择优取向的闪锌矿结构,内应力减少,并且当气压降至0.5和0.3Pa时薄膜出现了ZnTe和Te相。薄膜中的Zn和Cd原子含量大于靶材中的对应原子含量。薄膜的方块电阻随着氩气压的降低先减少,后增大。而薄膜的载流子浓度和迁移率则随着氩气压降低呈现先增大后减小的趋势。
The CdZnTe films were deposited by radio frequency magnetron sputtering on the FTO substrate at different pressure of Ar range from 0.08 to 1 Pa.The sputtering target was prepared from Cd0.9Zn0.1 Te ingot.The effects of Ar pressure on the morphology,structure,composition and electrical properties of CdZnTe film were investigated.As the decrease of Ar pressure,the evolution from column to sheet and then to particle morphology of CdZnTe films were shown.The grain size decreased from 180 to 50 nm.The deposited films possess stable cubic zinc-blende structure with(111)preferred orientation and the internal stress weakened as the Ar pressure decrease.The ZnTe and Te phase also occurred at the Ar pressure of 0.5 and 0.3 Pa.The composition of Zn and Cd was larger than that of target.The sheet resistance of CdZnTe film firstly decreased then increased as the Ar pressure decreasing,the carrier concentration and mobility showed opposite trend.
作者
席守智
介万奇
王涛
查钢强
王奥秋
于晖
徐凌燕
张昊
杨帆
周伯儒
徐亚东
谷亚旭
XI Shouzhi;JIE Wanqi;WANG Tao;ZHA Gangqiang;WANG Aoqiu;YU Hui;XU Lingyan;ZHANG Hao;YANG Fan;ZHOU Boru;XU Yadong;GU Yaxu(State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi’an 710072,China;Key Laboratory of Radiation Detection Materials and Devices,Ministry of Industry and Information Technology,Xi’an 710072,China)
出处
《功能材料》
EI
CAS
CSCD
北大核心
2018年第4期4128-4133,共6页
Journal of Functional Materials
基金
国家自然科学基金资助项目(51672216
51372205
51502244)
