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L型阵列探测器合成功率研究与设计 被引量:1

Research and design of L-type array detector
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摘要 针对行波探测器阵列只能合成输出功率而不能同时提高工作带宽的现状,基于m推演型滤波电路原理,提出了一种新的L型阵列探测器,即通过在光电二极管之间串联电容减少结电容对截止频率的影响,再与两个电感串联形成单个阵列单元,然后将单个阵列单元级联构成全新的L型滤波器电路结构。结果表明,L型探测器阵列能够对射频输出信号进行功率合成,同时工作带宽提高至67GHz,相较于传统光电探测器,工作带宽提高两倍。通过增加级联光电二极管的数量,可以持续增大输出功率,同时L型探测器阵列的推演方法可根据实际需求灵活设计出期望的光电探测器,为未来大带宽、高功率的光电探测器设计提供理论基础。 For the status quo of traveling wave detector array which can synthesize output power but can’t improve work bandwidth,this paper proposes a new L-type array detector.Using a capacitance,a photodiode,and two inductance in series to form a single array unit,the L-type array detector has a cascade cell array structure.The results show that L-type detector can carry on power synthesis of the RF output signal,increaseworking bandwidth to67GHz at the same time;Compared with the traditional photoelectric detector,the work bandwidth is tripled.The reasoning method proposed in this paper can be adopted to flexible design of ideal photodiodes,providing a theoretical foundation for future study of photoelectric detectors.
作者 王红华 文化锋 武晴涛 应祥岳 李军 施锋 Wang Honghua;Wen Huafeng;Wu Qingtao;Ying Xiangyue;Li Jun;Shi Feng(Faculty of Electrical Engineering and Computer Science,Ningbo University,Ningbo315000,China;Department of Electrical Engineering and Renewable Energy Engineering,Oregon Institute of Technology,3201Campus Drive,Klamath Falls,OR97601,USA)
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2018年第12期9-14,共6页 High Power Laser and Particle Beams
基金 国家自然科学基金项目(61371061) 浙江省自然科学基金项目(LY12F01010) 宁波市自然科学基金项目(2018A610024).
关键词 行波探测器 阵列 滤波电路 功率合成 光电探测器 traveling wave detector array filter circuit power synthesis photodetector
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  • 1王先富,牛忠霞.微波宽带放大器的设计与EDA仿真[J].无线电通信技术,2005,31(1):51-53. 被引量:6
  • 2李媛,应莹,丁荣林.一种新型缺陷接地结构及其滤波特性研究[J].电子测量与仪器学报,2007,21(2):44-48. 被引量:1
  • 3吴文婷.基于ANSOFT DESIGNER的低通巴特沃思滤波器的设计与优化[J].重庆工学院学报,2007,21(15):59-61. 被引量:4
  • 4WANG Y S, CHANG S J, TSAI C L, et al. 10-Gb/s planar InGaAs p-i-n photodetectors . IEEE Sensors Journal, 2010, 10 (10): 1559- 1563.
  • 5OLSEN G H, JOSHI A M, LANGE M, et al. A 128x 128 InGaAs detector array for 0. 8 btm - 1.7 μm room temperature operation [J]. Proceedings of SPIE, 1988, 972 (1341): 279 - 285.
  • 6Mitsubishi Electric, Inc. PD7XX8 series InGaAs pin photo- diodes [EB/OL]. (2004- 04 - 01) [2013 - 12 - 20]. http://www. mitsubishielectric-mesh, com/products/guang/info/pd to/2_5gbu, php.
  • 7FORREST S R. Performance of InxGa1-xAsyP1-y photodiodes with dark current limited by diffusion, generation recombina- tion, and tunneling . IEEE Journal of Quantum Electron, 1981, 17 (2): 217-226.
  • 8POULAIN P, RAZEGHIK M, KAZMIERSKI K, et al. InGaAs photodiodes prepared by low-pressure MOCVD. Electronics Letters, 1985, 21 (10) : 441 - 442.
  • 9CHEN Y W, HSU W C, HSU R T, et al. Low dark current InGaAs (P)/InP p-i-n photodiodes[J]. Japanese Journal of Appllied Physics, 2003, 42 (7): 424- 425.
  • 10FENG S, LU C. Influence of InP cap layer on photo-respon- sivity of InP/InGaAs PIN detector [C] // Proceedings of the 7th International Conference on Solid-State and Integrated Cir- cuits Technology. Beijing, China, 2004, 3: 2332- 2334.

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