摘要
采用磁控溅射方法制备了镓镁锌氧化物(GaMgZnO)透明导电薄膜,通过X射线衍射仪、四探针仪和分光光度计的测试分析,研究了沉积温度对GaMgZnO薄膜微观结构和电光性能的影响.结果显示:所制备的样品均为六角纤锌矿结构的多晶薄膜并具有c轴择优取向生长特点,其结晶质量和电光性能与沉积温度密切相关.当沉积温度为550 K时,GaMgZnO薄膜的晶粒尺寸最大(51.72 nm)、晶格应变最小(1.11×10^(-3))、位错密度(3.73×10^(14) line·m^(-2))、电阻率最低(1.63×10^(-3)Ω·cm)、可见光区平均透过率(82.41%)、品质因数最大(5.06×10~2Ω^(-1)·cm^(-1)),具有最好的结晶质量和光电综合性能.另外采用光学表征方法获得了薄膜样品的光学能隙,结果表明由于受Burstein-Moss效应的影响,GaMgZnO薄膜的光学能隙均大于未掺杂ZnO的数值.
Gallium magnesium zinc oxide(GaMgZnO)transparent conductive thin films were prepared by magnetron sputtering method.The influence of deposition temperature on the structural and electro-optical properties of the thin films was studied by X-ray diffraction(XRD),four-point probe and ultraviolet-visible spectrometer.The results show that all the thin films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate.The deposition temperature significantly affects the crystal quality and electro-optical properties of thin films.When the deposition temperature is at 550 K,the GaMgZnO thin film has the best crystalline quality and electro-optical properties,with the maximum grain size(51.72 nm),the minimum lattice strain(1.11×10^-3),the lowest dislocation density(3.73×10^14 line·m^-2)and resistivity(1.63×10^-3Ω·cm),and the highest average visible transmittance(82.41%)and figure of merit(5.06×10^2Ω^-1·cm^-1).Furthermore,the optical energy gap of the deposited films were determined and observed to be larger than that of undoped ZnO due to Moss-Burstein effect.
作者
顾锦华
朱雅
陆轴
康淮
Gu Jinhua;Zhu Ya;Lu Zhou;Kang Huai(Experimental Teaching and Laboratory Management Center,South-Central University for Nationalities,Wuhan 430074,China;College of Electronic Information Engineering,South-Central University for Nationalities,Wuhan 430074,China)
出处
《中南民族大学学报（自然科学版）》
CAS
2018年第4期88-94,共7页
Journal of South-Central University for Nationalities：Natural Science Edition
基金
湖北省自然科学基金资助项目(2011CDB418)
中央高校基本科研业务专项资金资助项目(CZP17002)
关键词
磁控溅射
掺杂氧化锌
透明导电薄膜
magnetron sputtering
doped zinc oxide
transparent conductive thin film
