摘要
文章采用热注入法制备CsPbBr3量子点,使用X射线衍射仪(X-ray diffraction,XRD)分析量子点的晶相结构,通过吸收光谱和循环伏安法表征量子点的能带结构。实验制备的量子点禁带宽度为2.52eV,半峰宽仅为25nm,可与小分子有机半导体C8-BTBT共同溶解于有机溶剂中,形成稳定的胶体分散体系。通过滴注和浸渍提拉法制备了CsPbBr3/C8-BTBT复合薄膜,分别采用365nm的紫外光和470nm的蓝光LED作为激发光源,表征了量子点薄膜及复合薄膜的光致发光性能。实验结果表明,纯CsPbBr3量子点薄膜的转换效率可达90%,以有机半导体C8-BTBT作为复合基质的薄膜在紫外光激发下光致转换效率提高了44%。
CsPbBr 3 quantum dots(QDs) were synthesized using high temperature injection and the crystallographic structure was characterized with X-ray diffraction(XRD). The band gap was characterized with UV-Vis absorption measurement in conjunction with cyclic voltammetry. The full width at half maximum(FWHM) of the QDs was only 25 nm and the band gap was 2.52 eV. Stabilized dissolutions of the QDs and a small-molecule organic semiconductor C8-BTBT were prepared using various organic solvents, thereby the CsPbBr 3/C8-BTBT composite film was readily prepared via drop casting and dip coating. The photoluminescence characteristics of the QDs film and the composite film were measured under the excitation of 365 nm UV light and 470 nm emission from LED respectively. The results showed that the conversion efficiency of QDs film was up to 90% and the luminous efficiency of the composite film increased by 44% with UV light emission.
作者
刘中梦雪
张春雨
黄玲玲
顾勋
王向华
LIU Zhongmengxue;ZHANG Chunyu;HUANG Lingling;GU Xun;WANG Xianghua(Academy of Photoelectric Technology, Hefei University of Technology, Hefei 230009, China)
出处
《合肥工业大学学报（自然科学版）》
CAS
北大核心
2019年第1期64-68,共5页
Journal of Hefei University of Technology：Natural Science
基金
国家自然科学基金资助项目(51203039)
关键词
量子点
小分子半导体
禁带宽度
转换效率
复合薄膜
quantum dots(QDs)
small-molecule semiconductor
band gap
conversion efficiency
composite film
