摘要
由于传统驱动下碳化硅(SiC)MOSFET受高开关速度特性及寄生参数影响,桥臂串扰现象更加严重,而现有抑制串扰驱动电路又往往会增加开关损耗、开关延时和控制复杂程度,因此本文结合驱动阻抗控制与负压关断的串扰抑制方法,提出一种改进门极驱动电路。首先,阐述串扰现象产生原理及其典型抑制方法。其次,在负压关断前提下,基于控制辅助三极管开断,降低串扰产生过程中驱动回路阻抗的思想,提出一种在栅源极增加三极管串联电容新型辅助支路的改进驱动方法,并分析其工作原理,研究改进驱动电路关键参数设计原则。最后,搭建双脉冲测试实验平台,在不同驱动电阻、输入电压、负载电流条件下对改进驱动电路设计的有效性进行验证。结果表明,传统驱动下SiC MOSFET桥臂串扰现象明显。相比典型抑制串扰驱动电路,提出的驱动方法在有效抑制串扰同时,减小了开关损耗与开关延时。
Due to the effects of higher switching speed and parasitic parameters,crosstalk in a phase-leg configuration of traditional Silicon Carbide(SiC)MOSFET driver is more serious,while the existing drive circuits for crosstalk suppression usually bring the disadvantages of increasing switching loss,switching delay or complex degree.Combined with the method of gate impedance control and gate voltage control for crosstalk suppression,an improved gate driver was proposed in this paper.Firstly,the cause of crosstalk phenomenon and its typical solution were described.Secondly,based on the idea of adding additional new auxiliary circuit with a triode series-connected capacitor between gate-source terminals to decrease the gate driver impedance when crosstalk occurred,an improved gate driver design method was proposed on the premise of applying a negative-biased turn-off gate voltage.The operating principle and the key parameters design rules were also studied.Finally,a double-pulse testing platform was established to verify the effectiveness of the improved gate driver under the conditions of different drive resistances,input voltages and load currents.The results show that the crosstalk phenomenon of traditional SiC MOSFET driver is obvious;compared with the typical gate driver,the proposed method can reduce the switching loss and delay.
作者
李辉
黄樟坚
廖兴林
钟懿
王坤
Li Hui;Huang Zhangjian;Liao Xinglin;Zhong Yi;Wang Kun(State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University Chongqing 400044 China)
出处
《电工技术学报》
EI
CSCD
北大核心
2019年第2期275-285,共11页
Transactions of China Electrotechnical Society
基金
国家重点研发计划(2018YFB0905700)
国家自然科学基金(51675354
51761135014)
重庆市重点产业关键技术创新专项(cstc2015zdcy-ztzx0171
cstc2017zdcy-zdyf0124)
重庆市研究生科研创新(CYS18009)资助项目
